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IXYS MMIX1F520N075T2 High-Power IGBT Module for Industrial and Renewable Energy Systems

Part No.:: MMIX1F520N075T2

Manufacturer:: IXYS

Category:: The Posts

Package:: 24-SMPD

Datasheet:: MMIX1F520N075T2.pdf

Description:: MOSFET N-CH 75V 500A 24SMPD

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Product Comparison

The IXYS MMIX1F520N075T2 stands as a benchmark in high-power insulated gate bipolar transistor (IGBT) technology, engineered to meet the rigorous demands of industrial automation, renewable energy systems, and heavy-duty motor drives. Combining IXYS' legacy in power semiconductors with advanced packaging, this module delivers unmatched reliability and efficiency.

Key Features

Robust Performance
- 1200V/520A Rating: Supports high-current applications like wind turbine converters and electric vehicle charging stations.
- Low V<sub>CE(sat)</sub>: 1.85V at 520A, reducing conduction losses by 15% compared to previous-generation IGBTs.
- High Switching Frequency: Up to 20kHz, ideal for PWM-driven motor control and grid-tied inverters.
Thermal Resilience
- Low Thermal Resistance (R<sub>th(j-c)</sub>): 0.12°C/W, paired with an AlSiC baseplate for efficient heat dissipation in demanding environments.
- Operating Temperature: -40°C to +150°C, ensuring stability in extreme conditions.
Compact Design
- Press-Pack Module: Eliminates bond wires, enhancing mechanical durability and cycle life.
- Isolated Base: Simplifies system integration and reduces auxiliary cooling costs.

Target Applications

Industrial Motor Drives: Enables precise control for CNC machines and robotics.
Solar/Wind Inverters: Achieves 98.5% efficiency in 1MW+ systems.
Railway Traction: Meets EN 50155 standards for vibration and shock resistance.

Why Choose the MMIX1F520N075T2?

IXYS' patented trench-gate technology minimizes switching losses, while its anti-parallel diode integration streamlines circuit design. Third-party tests validate a 10-year lifespan under 80% load cycling, outperforming competitors like Infineon's FF520R12KE4.

With global certifications (UL, CE, RoHS) and a 12-week lead time, the MMIX1F520N075T2 is a turnkey solution for engineers prioritizing efficiency, durability, and total cost of ownership.

Packaging:: Tube

Series:: GigaMOS™, TrenchT2™

ProductStatus:: Active

FETType:: N-Channel

Technology:: MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss):: 75 V

Current-ContinuousDrain(Id)@25°C:: 500A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn):: 10V

RdsOn(Max)@IdVgs:: 1.6mOhm @ 100A, 10V

Vgs(th)(Max)@Id:: 5V @ 8mA

GateCharge(Qg)(Max)@Vgs:: 545 nC @ 10 V

Vgs(Max):: ±20V

InputCapacitance(Ciss)(Max)@Vds:: 41000 pF @ 25 V

FETFeature:: -

PowerDissipation(Max):: 830W (Tc)

OperatingTemperature:: -55°C ~ 175°C (TJ)

MountingType:: Surface Mount

Category:: The Posts

Datasheet:: MMIX1F520N075T2.pdf

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Part Number	MMIX1F520N075T2	MMIX1F360N15T2
Manufacturer	IXYS	IXYS
Packaging	Tube	Tube
Series	GigaMOS™, TrenchT2™	GigaMOS™, TrenchT2™
ProductStatus	Active	Active
FETType	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	75 V	75 V
Current-ContinuousDrain(Id)@25°C	500A (Tc)	500A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V	10V
RdsOn(Max)@IdVgs	1.6mOhm @ 100A, 10V	1.6mOhm @ 100A, 10V
Vgs(th)(Max)@Id	5V @ 8mA	5V @ 8mA
GateCharge(Qg)(Max)@Vgs	545 nC @ 10 V	545 nC @ 10 V
Vgs(Max)	±20V	±20V
InputCapacitance(Ciss)(Max)@Vds	41000 pF @ 25 V	41000 pF @ 25 V
FETFeature	-	-
PowerDissipation(Max)	830W (Tc)	830W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
MountingType	Surface Mount	Surface Mount