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Toshiba Semiconductor and Storage TPH2900ENH,L1Q

TPH2900ENH,L1Q
Part No.:
TPH2900ENH,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Transistors - FETs, MOSFETs - Single
Package:
8-SOP Advance (5x5)
Datasheet:
Honch E-technology Co.,LtdTPH2900ENH,L1Q.pdf
Description:
MOSFET N-CH 200V 33A 8SOP
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
Payment
Shipping:
Shipping

Product details

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Packaging:
Tape & Reel (TR),Cut Tape (CT)
Series:
U-MOSVIII-H
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
200 V
Current-ContinuousDrain(Id)@25°C:
33A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
29mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id:
4V @ 1mA
GateCharge(Qg)(Max)@Vgs:
22 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2200 pF @ 100 V
FETFeature:
-
PowerDissipation(Max):
78W (Tc)
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount
Category:
Transistors - FETs, MOSFETs - Single
Datasheet:
Honch E-technology Co.,LtdTPH2900ENH,L1Q.pdf

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TPH2900ENH,L1Q?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TPH2900ENH,L1Q we delivered, we will accept the replacement or return of the TPH2900ENH,L1Q only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPH2900ENH,L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TPH2900ENH,L1Q pin diagram, TPH2900ENH,L1Q datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TK65A10N1,S4X SSM3K341TU,LF TPH8R903NL,LQ TK7S10N1Z,LQ SSM6K361NU,LF
Part Number TK65A10N1,S4X SSM3K341TU,LF TPH8R903NL,LQ TK7S10N1Z,LQ SSM6K361NU,LF
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V 200 V 200 V 200 V 200 V
Current-ContinuousDrain(Id)@25°C 33A (Ta) 33A (Ta) 33A (Ta) 33A (Ta) 33A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 29mOhm @ 16.5A, 10V 29mOhm @ 16.5A, 10V 29mOhm @ 16.5A, 10V 29mOhm @ 16.5A, 10V 29mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 2200 pF @ 100 V 2200 pF @ 100 V 2200 pF @ 100 V 2200 pF @ 100 V 2200 pF @ 100 V
FETFeature - - - - -
PowerDissipation(Max) 78W (Tc) 78W (Tc) 78W (Tc) 78W (Tc) 78W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

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